RELATION BETWEEN FLOW, POWER, AND PRESENCE OF CARRIER GAS DURING PLASMA DEPOSITION OF THIN-FILMS

被引：6

作者：

KAGANOWICZ, G

ROBINSON, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.573744

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1901 / 1904

页数：4

共 13 条

[1]

BONIFIELD TD, 1982, DEPOSITION TECHNOLOG

[2]

HOLLAHAN JR, 1978, THIN FILM PROCESS

[3] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J].

ISHIBASHI, K ;

MATSUMURA, M .

KAGANOWICZ, G ;

BAN, VS ;

ROBINSON, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1233-1237

[5]

KAGANOWICZ G, UNPUB

[6]

KAGANOWICZ G, 1984, 34TH CAN CHEM ENG C

[7]

KAGANOWICZ G, 1983, 6TH P INT S PLASM CH, P792

[8]

MATSUDA A, 1981, J PHYS PARIS, V42, pC4

[9]

MCCRACKIN, 1969, NBS496 TECHN NOT

[10]

MILEKED JT, 1971, HDB ELECTRONIC MATER, V3