ROOM-TEMPERATURE GLOW-DISCHARGE DEPOSITION OF SILICON-OXIDES FROM SIH4 AND N2O

被引：23

作者：

KAGANOWICZ, G

BAN, VS

ROBINSON, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.572501

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1233 / 1237

页数：5

相关论文

共 11 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
ADAMS, AC
ALEXANDER, FB
CAPIO, CD
SMITH, TE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
[2] DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR
HOLLAHAN, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 930 - 934
[3] JOYCE RJ, 1967, THIN FILM SOLIDS, V1, P48
[4] KAGANOWICZ G, 1983, 6TH P INT S PLASM CH, P792
[5] MCCRACKIN, 1969, NBS496 TECH NOT
[6] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION
SINHA, AK
LEVINSTEIN, HJ
SMITH, TE
QUINTANA, G
HASZKO, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608
[7] SINHA AK, 1980, SOLID STATE TECHNOL, V23, P133
[8] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1750 - 1754
[9] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE
STERLING, HF
SWANN, RCG
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &
[10] VANDEVEN EPG, 1978, ELECTROCHEM SOC EXTE, V78, P525