RADIATION HARDNESS STUDIES ON SILICON DETECTORS IN FAST-NEUTRON FIELDS

被引：5

作者：

ANGELESCU, T

CHEREMUKHIN, AE

GHETE, VM

GHIORDANESCU, N

GOLUTVIN, IA

LAZANU, S

LAZANU, I

MIHUL, A

RADU, A

SUSOVA, NY

VASILESCU, A

ZAMYATIN, NI

机构：

[1] JOINT NUCL RES INST, DUBNA, RUSSIA

[2] INST PHYS & NUCL ENGN, BUCHAREST, ROMANIA

[3] INST ATOM PHYS, R-76900 BUCHAREST, ROMANIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 357卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)01534-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical and alpha-particle PHA damage tests for ELMA and SGS silicon detectors irradiated at two different fast neutron facilities, in the range of fluences from 10(10) to 10(15) n/cm(2) are presented. Results on depletion voltage, alpha damage constants and self-annealing are discussed. Supplementary damage effects due to nuclear reactions are evaluated, The spread of the data in the self-annealing corrected alpha damage constant versus hardness parameter plot shows the difficulty in comparing the results obtained in different neutron environments. A systematics is however possible, in the framework of standardization of the ''1 MeV equivalent'' neutron spectrum.

引用

页码：55 / 63

页数：9

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