ELECTRON-PARAMAGNETIC RESONANCE OF EXTENDED DEFECTS IN SEMI-INSULATING GAAS

被引：8

作者：

GOLTZENE, A

MEYER, B

SCHWAB, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4541 / 4543

页数：3

共 15 条

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[3] ESR IN SEMI-INSULATING GAAS-CR AND COLORIMETRIC DETERMINATION OF CR CONTENT
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[4] GEWINNER D, 1979, J PHYS, V40, P75
[5] EPR INVESTIGATIONS OF THE DEFECT CHEMISTRY OF SEMI-INSULATING GAAS-CR
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[6] ELECTRON-SPIN RESONANCE OF SHALLOW LEVEL CARRIERS IN CUCL
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[7] Goltzene A., 1980, Semi-Insulating III-V Materials, P221
[8] LANCASTER G, 1966, ELECTRON SPIN RESONA, P113
[9] THERMAL AND MAGNETIC PROPERTIES OF CUSO4.5H2O AND CUSEO4.5H2O BELOW 1 DEGREE K
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[J]. PHYSICA, 1962, 28 (02): : 119 - &
[10] ESR STUDY ON SURFACE PROPERTIES OF SEMICONDUCTOR .2. III-V COMPOUNDS (GAAS, GASB AND INSB)
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