THERMAL CHEMICAL-VAPOR-DEPOSITION OF SEMICONDUCTORS FOR THIN-FILM-TRANSISTOR APPLICATIONS

被引：3

作者：

GREVE, DW

机构：

[1] Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 25卷 / 2-4期

关键词：

D O I：

10.1016/0167-9317(94)90034-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Formation of the semiconducting layer is a crucial part of the fabrication of thin film transistors for flat panel display applications. Despite severe constraints on maximum process temperatures, control of grain size and surface roughness is essential in order to achieve good transistor characteristics. This paper reviews the various approaches which have been explored for deposition of the semiconducting thin films. I will show that the transistor characteristics are strongly influenced by nucleation processes in the bulk of the films and at the interfaces. Control of these nucleation processes will be best achieved by integrated processing where multiple layers are grown without exposure to contaminants.

引用

页码：337 / 344

页数：8

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