THE OPTICAL AND PHOTOELECTROCHEMICAL PROPERTIES OF ELECTRODEPOSITED CDS AND SNS THIN-FILMS

被引：64

作者：

ADACHI, A ^{[1
]}

KUDO, A ^{[1
]}

SAKATA, T ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, INTERDISCIPLINARY GRAD SCH SCI & TECHNOL, DEPT ELECTR CHEM, MIDORI KU, YOKOHAMA, KANAGAWA 226, JAPAN

来源：

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN | 1995年 / 68卷 / 11期

关键词：

D O I：

10.1246/bcsj.68.3283

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An electrodeposition technique was employed to synthesize CdS and SnS thin films. The optical and photoelectrochemical properties of these films were studied. Red emission peaks of as-deposited CdS thin films were observed around 650-700 nm at 77 K. Anodic photocurrents were observed for the CdS thin films used as semiconductor electrodes. Lowering current densities for the deposition increased both the photoluminescence intensity and the photocurrents. SnS thin films were prepared by a pulsed electrodeposition technique. The films had a large absorption coefficient of 10(5) cm(-1) order. Stirring the electrolyte solution had a drastic effect on the film growth. This suggests that the diffusion of elemental sulfur which reacts with electrochemically formed Sn is the rate determining step of the SnS formation.

引用

页码：3283 / 3288

页数：6

共 26 条

[21] ELECTROSYNTHESIZED THIN-FILMS OF GROUP-II-VI COMPOUND SEMICONDUCTORS, ALLOYS AND SUPERSTRUCTURES [J].