SEMIEMPIRICAL BAND-STRUCTURE OF PTGA2

被引：16

作者：

KIM, S

HSU, LS

WILLIAMS, RS

机构：

[1] UNIV CALIF LOS ANGELES,DEPT PHYS,LOS ANGELES,CA 90024

[2] UNIV CALIF LOS ANGELES,CTR SOLID STATE SCI,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.36.3099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3099 / 3103

页数：5

共 20 条

[1] ELECTRONIC STRUCTURE OF FCC TRANSITION METALS IR, RH, PT, AND PD [J].

ANDERSEN, OK .

PHYSICAL REVIEW B, 1970, 2 (04) :883-&

[2] PREPARATION AND SINGLE-CRYSTAL GROWTH OF PTGA2 AND AUX2 COMPOUNDS [J].

BAUGHMAN, RJ .

MATERIALS RESEARCH BULLETIN, 1972, 7 (06) :505-&

[3] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[4] CHEMISORPTION OF C2H2 ON PD(111) AND PT(111) - FORMATION OF A THERMALLY ACTIVATED OLEFINIC SURFACE COMPLEX [J].

DEMUTH, JE .

CHEMICAL PHYSICS LETTERS, 1977, 45 (01) :12-17

[5]

ECKHARDT H, 1984, J PHYS F MET PHYS, V14, P97

[6] SEMIEMPIRICAL BAND-STRUCTURE AND PARTIAL DENSITY OF STATES OF CUCL [J].

KIM, S ;

WILLIAMS, RS .

PHYSICAL REVIEW B, 1987, 35 (06) :2823-2826

[7] MIXED-BASIS BAND-STRUCTURE INTERPOLATION SCHEME APPLIED TO THE FLUORITE-STRUCTURE COMPOUNDS NISI2, AUAL2, AUGA2, AND AUIN2 [J].

KIM, S ;

NELSON, JG ;

WILLIAMS, RS .

PHYSICAL REVIEW B, 1985, 31 (06) :3460-3468

[8] ANALYSIS OF CHEMICAL BONDING IN TIC, TIN, AND TIO USING 2ND-PRINCIPLES BAND STRUCTURES FROM PHOTOEMISSION DATA [J].

KIM, S ;

WILLIAMS, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1603-1603

[9] EMPIRICAL BAND CALCULATIONS OF THE OPTICAL-PROPERTIES OF D-BAND METALS .1. CU, AG, AND AU [J].

LASSER, R ;

SMITH, NV ;

BENBOW, RL .

PHYSICAL REVIEW B, 1981, 24 (04) :1895-1909

[10] The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces [J].

Lince, Jeffrey R. ;

Tsai, C. Thomas ;

Williams, R. Stanley .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) :537-542

← 1 2 →