The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces

被引:25
作者
Lince, Jeffrey R.
Tsai, C. Thomas
Williams, R. Stanley
机构
[1] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
[2] Univ Calif Los Angeles, Ctr Solid State Sci, Los Angeles, CA 90024 USA
关键词
D O I
10.1557/JMR.1986.0537
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2, were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300 degrees and 480 degrees C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500 degrees C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.
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页码:537 / 542
页数:6
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