INFLUENCE OF INTERVALLEY TRANSITIONS ON PHOTOCONDUCTIVITY IN NORMAL-TYPE SI(100) INVERSION LAYERS

被引：6

作者：

DOHLER, GH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0038-1098(76)91499-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：633 / 636

页数：4

相关论文

共 6 条

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[3] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
[4] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
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[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[5] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[6] WHEELER RG, TO BE PUBLISHED