EVIDENCE OF A GAS-PHASE TRANSPORT MECHANISM FOR SI INCORPORATION IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS

被引：6

作者：

GEORGE, T

WEBER, ER

NOZAKI, S

MURRAY, JJ

WU, AT

UMENO, M

机构：

[1] INTEL CORP,SANTA CLARA,CA 95052

[2] NAGOYA INST TECHNOL,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 20期

关键词：

D O I：

10.1063/1.102092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2090 / 2092

页数：3

共 6 条

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DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[2]

KUBACHEWSKI O, 1979, METALLURGICAL THERMO, P372

[3] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J].

KUECH, TF ;

VEUHOFF, E .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :148-156

[4]

LIU ST, 1987, 10TH INT C CVD, V87, P428

[5]

MEDLAND J, 1986, PROPERTIES GALLIUM 2

[6] NEW MECHANISM FOR SI INCORPORATION IN GAAS-ON-SI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

NOZAKI, S ;

MURRAY, JJ ;

WU, AT ;

GEORGE, T ;

WEBER, ER ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1674-1676

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