Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfaces

被引：35

作者：

Dadap, JI

Hu, XF

Russell, NM

Ekerdt, JG

Lowell, JK

Downer, MC

机构：

[1] UNIV TEXAS,DEPT CHEM ENGN,SCI & TECHNOL CTR SYNTH GROWTH & ANAL ELECTR MAT,AUSTIN,TX 78712

[2] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/2944.488693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the-art femtosecond lasers have the potential to dramatically improve the effectiveness of interface nonlinear optics for diagnosing Si(001) interface characteristics that are relevant to Si microelectronics manufacturing, We present an analysis of signal acquisition rate and parasitic surface heating for SHG by ultrashort laser pulses at Si(001) interfaces, emphasizing their dependence on the pulse duration, energy, repetition rate, wavelength and focal geometry of the pulses. The results of the analysis are illustrated by several experimental examples of SHG by a Ti: sapphire femtosecond laser from a buried Si(001)SiO2 interface or a Si(001) surface during chemical vapor deposition.

引用

页码：1145 / 1155

页数：11

共 39 条

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