STABILITY ANALYSIS OF CR-MIS SOLAR-CELLS

被引：3

作者：

RAJESWARAN, G ^{[1
]}

ANDERSON, WA ^{[1
]}

THAYER, M ^{[1
]}

LEE, BW ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

IEEE TRANSACTIONS ON RELIABILITY | 1982年 / 31卷 / 03期

关键词：

D O I：

10.1109/TR.1982.5221337

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：276 / 280

页数：5

共 7 条

[1] BARRIER HEIGHT MODIFICATION IN SILICON SCHOTTKY (MIS) SOLAR-CELLS [J].

ANDERSON, WA ;

KIM, JK ;

DELAHOY, AE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :453-457

[2] AN EVALUATION OF POTENTIALLY LOW-COST SILICON SUBSTRATES FOR METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J].

ANDERSON, WA ;

RAJESWARAN, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1597-1599

[3] A REVISED PROCESS TO INCREASE EFFICIENCY AND REPRODUCIBILITY IN CR-MIS SOLAR-CELLS [J].

ANDERSON, WA ;

RAJESWARAN, G ;

RAJKANAN, K ;

HOEFT, G .

ELECTRON DEVICE LETTERS, 1980, 1 (07) :128-130

[4] RELIABILITY STUDIES ON MIS SOLAR-CELLS [J].

ANDERSON, WA ;

KIM, JK .

APPLIED PHYSICS, 1978, 17 (04) :401-404

[5]

ANDERSON WA, 1980, SERI1 REP

[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[7]

WEAST RC, 1980, CRC HDB CHEM PHYSICS, pD45

← 1 →