LOW-FREQUENCY INTENSITY NOISE IN SEMICONDUCTOR-LASERS

被引：36

作者：

FRONEN, RJ

VANDAMME, LKJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1109/3.188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：724 / 736

页数：13

共 18 条

[1]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[2] FLUCTUATIONS IN LUMINESCENT JUNCTIONS [J].

BROPHY, JJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) :2465-&

[3] VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

BROSSON, P ;

RIPPER, JE ;

PATEL, NB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :273-280

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P174

[5] CORRELATION OF LOW-FREQUENCY INTENSITY AND FREQUENCY FLUCTUATIONS IN GAAIAS LASERS [J].

DANDRIDGE, A ;

TAYLOR, HF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1738-1750

[6]

FINCK JCJ, 1980, PHILIPS TECH REV, V39, P37

[7]

FRONEN RJ, IN PRESS 9TH P INT C

[8] HIGHLY RELIABLE AND MODE-STABILIZED OPERATION IN V-CHANNELED SUBSTRATE INNER STRIPE LASERS ON P-GAAS SUBSTRATE EMITTING IN THE VISIBLE WAVELENGTH REGION [J].

HAYAKAWA, T ;

MIYAUCHI, N ;

YAMAMOTO, S ;

HAYASHI, H ;

YANO, S ;

HIJIKATA, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7224-7234

[9]

HAYAKAWA T, 1981, IEEE J QUANTUM ELECT, V17, P2005

[10] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

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