PHOTOCONDUCTIVITY AND EXTRINSIC DOPING OF P-CUINSE2

被引:8
作者
SHAHIDI, AV
SHIH, I
CHAMPNESS, CH
机构
来源
SOLAR ENERGY MATERIALS | 1985年 / 12卷 / 05期
关键词
D O I
10.1016/0165-1633(85)90008-5
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:383 / 389
页数:7
相关论文
共 18 条
[11]   FABRICATION OF P AND N TYPE SINGLE-CRYSTALS OF CUINSE2 [J].
PARKES, J ;
TOMLINSON, RD ;
HAMPSHIRE, MJ .
JOURNAL OF CRYSTAL GROWTH, 1973, 20 (04) :315-318
[12]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF CUINSE2 [J].
SHAHIDI, AV ;
SHIH, I ;
ARAKI, T ;
CHAMPNESS, CH .
JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) :297-310
[13]  
Shay J. L., 1975, TERNARY CHALCOPYRITE
[14]   PREPARATION OF CRYSTALLINE CUINSE2 BY DIRECTIONAL FREEZING [J].
SHIH, I ;
SHAHIDI, AV ;
CHAMPNESS, CH .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :411-414
[15]  
SHING YH, 1984, 17TH P IEEE PHOT SPE
[16]   THE HALL MEASUREMENT OF HEAT-TREATED CUINSE2 [J].
TAKENOSHITA, H ;
NAKAU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :1333-1334
[17]   ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].
TELL, B ;
SHAY, JL ;
KASPER, HM .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&
[18]  
ZHUSE VP, 1958, SOVIET PHYS J TECHN, V3, P1925