A 2-STAGE MONOLITHIC-IF AMPLIFIER UTILIZING A TA2O5 CAPACITOR

被引：2

作者：

CHU, A

MAHONEY, LJ

ELTA, ME

COURTNEY, WE

FINN, MC

PIACENTINI, WJ

DONNELLY, JP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/T-ED.1983.21064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：21 / 26

页数：6

共 13 条

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[3] TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED-CIRCUITS [J].

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[4] TA THIN-FILM CAPACITORS WITH AN AL UNDERLAY FOR HIGH-FREQUENCY APPLICATIONS [J].

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[5]

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[6] MONOLITHIC GAAS DIRECT-COUPLED AMPLIFIERS [J].

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[7]

LACHAPELLE EA, 1968, Patent No. 3387952

[8]

NICLAS KB, 1982, ISSCC DIG TECH PAP I, V25, P196

[9]

Petersen W. C., 1981, 1981 IEEE MTT-S International Microwave Symposium Digest, P354

[10]

PITETTI RC, 1971, 21ST P IEEE EL COMP, P195

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