METHOD OF MEASURING DIFFERENTIAL PHOTOVOLTAGE SPECTRUM AT SCHOTTKY-BARRIER

被引:10
作者
NISHINO, T [1 ]
YAMANO, F [1 ]
HAMAKAWA, Y [1 ]
机构
[1] OSAKA UNIV,FAC ENGN SCI,OSAKA 560,JAPAN
关键词
D O I
10.1143/JJAP.14.1885
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1885 / 1896
页数:12
相关论文
共 30 条
[1]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[2]  
BATZ B, 1972, SEMICONDUCT SEMIMET, V9, P316
[3]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&
[4]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[5]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[6]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[7]  
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[8]  
HAMAKAWA Y, 1975, OPTICAL PROPERTIES S, P541
[9]  
KARIYA T, 1974, JPN ANALYST, V23, P166
[10]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P788