HOLE EFFECTIVE MASS AND IMPURITY LEVELS IN UNDOPED AGTLTE - OPTIMUM THERMOELECTRIC FIGURE OF MERIT

被引：9

作者：

PISTOULET, B ^{[1
]}

COQUILLAT, D ^{[1
]}

TEDENAC, JC ^{[1
]}

BRUN, G ^{[1
]}

MAURIN, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CHIM MAT LAB,CNRS,ERA 314,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 02期

关键词：

D O I：

10.1002/pssa.2210770232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：669 / 677

页数：9

共 10 条

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[4]

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[6] THERMOELECTRIC FIGURE OF MERIT OF 2-BAND SEMICONDUCTORS [J].

SIMON, R .

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[7]

SIMON R, 1963, ADVANCED ENERGY CONV, V3, P515

[8]

Simon R., 1961, ADV ENERG CONVERS, V1, P81

[9] THE CRYSTAL-STRUCTURE OF AGTIX PHASES (X = S, SE, TE) [J].

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MAURIN, M .

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[10]

TEDENAC JC, 1983, 2ND EUR C SOL STAT C, V3, P361

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