JUNCTION PROPERTIES OF CLO4--DOPED POLY(METHYLQUINOLINE) WITH INDIUM

被引：5

作者：

AN, H ^{[1
]}

ISHIZAWA, R ^{[1
]}

SATO, K ^{[1
]}

KOBAYASHI, S ^{[1
]}

YOSOMIYA, R ^{[1
]}

机构：

[1] CHIBA INST TECHNOL,DEPT IND CHEM,NARASHINO,CHIBA 275,JAPAN

来源：

SYNTHETIC METALS | 1993年 / 58卷 / 03期

关键词：

D O I：

10.1016/0379-6779(93)91142-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Junction properties of ClO4--doped poly(4-methylquinoline) with indium are investigated using a sandwich-type element. ClO4--doped poly(4-methylquinoline) and indium form rectification contacts, whereas ohmic contacts are formed for junctions with gold or platinum. From analyses of current-voltage and capacitance-voltage characteristics, we suggest that a Schottky barrier is formed at the interface between poly(4-methylquinoline) and indium.

引用

页码：335 / 341

页数：7

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