RECOMBINATION PROCESSES AND OPTICAL BIAS IN UNDOPED A-SI-H

被引：15

作者：

PANDYA, R

SCHIFF, EA

机构：

[1] Syracuse Univ, Syracuse, NY, USA, Syracuse Univ, Syracuse, NY, USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

WWSupported by the U. S. National Science Foundation;

D O I：

10.1016/0022-3093(85)90735-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

5

引用

收藏

页码：623 / 626

页数：4

相关论文

共 5 条

[1] THE LONG-TIME DRIFT MOBILITY IN A-SI-H - OPTICAL BIAS AND TEMPERATURE-DEPENDENCE
PANDYA, R
SCHIFF, EA
CONRAD, KA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 193 - 198
[2] PANDYA R, 1985, PHIL MAG B
[3] CALCULATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN HYDROGENATED AMORPHOUS-SILICON
SILVER, M
SNOW, E
ADLER, D
[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 15 - 17
[4] TRANSIENT QUENCHING OF CW LUMINESCENCE IN A-SI-H
STODDART, HA
TAUC, J
[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (06) : 489 - 492
[5] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01): : L15 - L20