DEPENDENCE OF GIANT MAGNETORESISTANCE ON CU-LAYER THICKNESS IN CO/CU MULTILAYERS - A SIMPLE DILUTION EFFECT

被引:38
作者
PARKIN, SSP
MODAK, A
SMITH, DJ
机构
[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287
[2] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 14期
关键词
D O I
10.1103/PhysRevB.47.9136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dependence of the giant magnetoresistance in Co/Cu multilayers on Cu spacer layer thickness is shown to be surprisingly straightforward for multilayers comprised of thin Co layers. At 4.2 K the magnetoresistance decays simply as the inverse Cu spacer layer thickness, which we consider to be a result of dilution of the Co/Cu interfacial regions which give rise to the giant magnetoresistance effect. At 295 K there is an additional exponential decay whose decay length we attribute to volume scattering within the Cu layers. High-resolution cross-section transmission electron micrographs show a high degree of structural ordering within the Cu layers and across the Co/Cu interfaces, perhaps accounting for the long volume scattering lengths (congruent-to 300 angstrom at 295 K) found within the Cu layers.
引用
收藏
页码:9136 / 9139
页数:4
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