SHALLOW ZINC DIFFUSION IN LIQUID-PHASE EPITAXIAL GAAS AND (GAAL)AS AT 600-DEGREES-C

被引：11

作者：

BLUM, SE

SMALL, MB

GUPTA, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：108 / 110

页数：3

共 14 条

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[7] ISOCONCENTRATION DIFFUSION OF ZINC IN GAAS AT 1000 DEGREES C [J].

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[8]

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[10] AUTOMATED-SYSTEM FOR THE GROWTH OF MULTILAYERED STRUCTURES IN THE (GAAL)AS SYSTEM BY LPE [J].

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