MINORITY-CARRIER LIFETIME IN LPE HG1-XCDX TE

被引：33

作者：

BAJAJ, J

SHIN, SH

PASKO, JG

KHOSHNEVISAN, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572208

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1749 / 1751

页数：3

共 6 条

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[2] SURFACE AND INTERFACE RECOMBINATION IN THIN-FILM HGCDTE PHOTOCONDUCTORS [J].

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CARLSON, FF ;

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[3] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

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[4] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1639-1640

[5] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].

KINCH, MA ;

BRAU, MJ ;

SIMMONS, A .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1649-1663

[6] INTRINSIC CARRIER CONCENTRATION OF HG1-XCDXTE [J].

NEMIROVSKY, Y ;

FINKMAN, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8107-8111

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