INTRINSIC CARRIER CONCENTRATION OF HG1-XCDXTE

被引:36
作者
NEMIROVSKY, Y
FINKMAN, E
机构
[1] Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa
关键词
Compendex;
D O I
10.1063/1.325950
中图分类号
O59 [应用物理学];
学科分类号
摘要
The intrinsic carrier concentration ni is measured for Hg 1-xCdxTe with 0.205≤x≤0.22 and x=0.29 and 150<T<320 K. The measurements are based on Hall data of uncompensated well-characterized samples. In addition to the galvanomagnetic measurements, photoconductive response and infrared transmittance have been used to determine and to verify the uniformity and composition of the samples. The experimental data are compared with calculations of the intrinsic carrier concentration which are based on an expression for the band gap recently measured. The following expression for the intrinsic carrier concentration is obtained: n i=[1.265×1016T3/2(6+x)-3/2 E3/2G]{1+[1+22.72(6+x)3/2E-3/2 G@qL exp(EG/KT)]1/2}-1 (cm -3), where the band gap EG is given by EG(eV) =6.006×10-4T (1-1.89x)+1.948x-0.337.
引用
收藏
页码:8107 / 8111
页数:5
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