VARIABLE RANGE HOPPING INDUCED BY ELECTRON-SPIN RESONANCE IN N-TYPE SILICON AND GERMANIUM

被引：9

作者：

KAMIMURA, H ^{[1
]}

MOTT, NF ^{[1
]}

机构：

[1] UNIV CAMBRIDGE CAVENDISH LAB,CAMBRIDGE,ENGLAND

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1976年 / 40卷 / 05期

关键词：

D O I：

10.1143/JPSJ.40.1351

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1351 / 1358

页数：8

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