INFLUENCE OF SUBSTRATE ORIENTATION ON THE ELECTRICAL-PROPERTIES OF CUINSE2 EPITAXIAL LAYERS ON GAAS SUBSTRATES

被引：2

作者：

NEUMANN, H

NOWAK, E

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 06期

关键词：

D O I：

10.1002/crat.2170180610

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：779 / 785

页数：7

共 15 条

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NEUMANN, H ;

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[5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF CUINSE2 EPITAXIAL LAYERS PREPARED BY SINGLE-SOURCE EVAPORATION [J].

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[6]

NEUMANN H, 1981, CRYST RES TECHNOL, V16, P1369

[7] INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRICAL-PROPERTIES OF AIBIIIC2VI COMPOUNDS [J].

NEUMANN, H .

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[9] EPITAXIAL LAYERS OF CUINSE2 ON GAAS [J].

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[10]

SCHUMANN B, 1981, CRYST RES TECHNOL, V16, P675

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