PLASMA-GROOVED, BURIED CONTACT SILICON SOLAR-CELLS

被引:8
作者
CHONG, CM
DAVIES, KE
WENHAM, SR
GROSS, M
HORWITZ, CM
GREEN, MA
机构
[1] Joint Microelectronics Research Centre, University of New South Wales, Kensington
关键词
D O I
10.1063/1.348429
中图分类号
O59 [应用物理学];
学科分类号
摘要
Solar cells with less than 1% front-surface metal shading loss have been made with a deep-grooving hollow cathode dry etching process. Compared with standard laser-grooved cells, a 4% relative increase in short-circuit current density has been demonstrated. Open-circuit voltages of over 640 mV (air mass 1.5, 25-degrees-C), a fill factor of almost 79%, and the application of an antireflection coating have resulted in a one-sun efficiency of 19.2%. This is one of the highest efficiencies yet reported for a cleaved 4 cm2 silicon solar cell.
引用
收藏
页码:4135 / 4136
页数:2
相关论文
共 7 条
[1]   CHARACTERIZATION OF 23-PERCENT EFFICIENT SILICON SOLAR-CELLS [J].
GREEN, MA ;
BLAKERS, AW ;
ZHAO, JH ;
MILNE, AM ;
WANG, AH ;
DAI, XM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :331-336
[2]  
GREEN MA, 1987, 3RD INT PHOT SCI ENG, P153
[4]   HOLLOW-CATHODE ETCHING AND DEPOSITION [J].
HORWITZ, CM ;
BORONKAY, S ;
GROSS, M ;
DAVIES, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1837-1844
[5]  
KING RR, 1989, 4TH P PVSEC SYDN, P795
[6]  
WENHAM SP, 1989, 4TH P PVSEC SYDN, P443
[7]  
WENHAM SR, 1990, 21ST IEEE PHOT SPEC