ELECTRONIC-STRUCTURE OF LA2-XSRXNIO4 STUDIED BY PHOTOEMISSION AND INVERSE-PHOTOEMISSION SPECTROSCOPY

被引:81
作者
EISAKI, H
UCHIDA, S
MIZOKAWA, T
NAMATAME, H
FUJIMORI, A
VANELP, J
KUIPER, P
SAWATZKY, GA
HOSOYA, S
KATAYAMAYOSHIDA, H
机构
[1] UNIV TOKYO, DEPT PHYS, BUNKYO KU, TOKYO 113, JAPAN
[2] UNIV GRONINGEN, CTR MAT SCI, DEPT SOLID STATE PHYS, 9747 AG GRONINGEN, NETHERLANDS
[3] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 980, JAPAN
[4] TOHOKU UNIV, DEPT PHYS, SENDAI, MIYAGI 980, JAPAN
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 21期
关键词
D O I
10.1103/PhysRevB.45.12513
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.
引用
收藏
页码:12513 / 12521
页数:9
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