MODELING OF NARROW-BASE BIPOLAR-TRANSISTORS INCLUDING VARIABLE-BASE-CHARGE AND AVALANCHE EFFECTS

被引：14

作者：

HEBERT, F

ROULSTON, DJ

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.23239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2323 / 2328

页数：6

共 15 条

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