METAL-INDUCED IMPURITY STATES AT THE INP TRANSITION-METAL INTERFACE

被引：9

作者：

SCHAFFLER, F ^{[1
]}

DRUBE, W ^{[1
]}

HUGHES, G ^{[1
]}

LUDEKE, R ^{[1
]}

RIEGER, D ^{[1
]}

HIMPSEL, FJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574598

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1528 / 1530

页数：3

共 9 条

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[5] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J].

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SPICER, WE .

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[6] METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110) [J].

LUDEKE, R ;

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LANDGREN, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :874-878

[7] ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES [J].

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LANDGREN, G .

PHYSICAL REVIEW B, 1986, 33 (08) :5526-5535

[8]

LUDEKE R, 1986, IN PRESS P INT C PHY

[9] THE INTERACTION OF AL, MN, AND AG WITH CLEAN AND OXIDIZED GAAS AND INP(110) SURFACES [J].

WILLIAMS, RH ;

MCLEAN, AB ;

EVANS, DA ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :966-973

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