ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES

被引：81

作者：

LUDEKE, R

LANDGREN, G

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：5526 / 5535

页数：10

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[1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[3] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS
CALDAS, MJ
FAZZIO, A
ZUNGER, A
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673
[4] MEASUREMENT AND CALCULATION OF POLARIZATION AND POTENTIAL-ENERGY EFFECTS ON CORE-ELECTRON BINDING-ENERGIES IN SOLIDS - X-RAY PHOTOEMISSION OF RARE-GASES IMPLANTED IN NOBLE-METALS
CITRIN, PH
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1974, 10 (12) : 4948 - 4963
[5] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
DONIACH, S
SUNJIC, M
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : 285 - &
[6] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS
DUKE, CB
MAILHIOT, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177
[7] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[8] AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
EASTMAN, DE
DONELON, JJ
HIEN, NC
HIMPSEL, FJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2): : 327 - 336
[9] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[10] FERMI ENERGY PINNING BEHAVIOR AND CHEMICAL-REACTIVITY OF THE PD/GAAS (110) INTERFACE
KENDELEWICZ, T
PETRO, WG
PAN, SH
WILLIAMS, MD
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 113 - 115