ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES

被引：81

作者：

LUDEKE, R

LANDGREN, G

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5526 / 5535

页数：10

共 30 条

[21] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS
ROWE, JE
CHRISTMAN, SB
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1471 - 1475
[22] INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110)
SKEATH, P
LINDAU, I
CHYE, PW
SU, CY
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1143 - 1148
[23] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
CHYE, P
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[24] TANG JYF, 1984, J VAC SCI TECHNOL B, V2, P459, DOI 10.1116/1.582895
[25] METAL-SEMICONDUCTOR INTERFACE - SI (111) AND ZINCBLENDE (110) JUNCTIONS
TEJEDOR, C
FLORES, F
LOUIS, E
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (12): : 2163 - 2177
[26] SCHOTTKY-BARRIER HEIGHTS AND THE CONTINUUM OF GAP STATES
TERSOFF, J
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 465 - 468
[27] VOGEL P, UNPUB
[28] CRITICAL DEVELOPMENT STAGES FOR THE REACTIVE CR-GAAS(110) INTERFACE
WEAVER, JH
GRIONI, M
JOYCE, J
[J]. PHYSICAL REVIEW B, 1985, 31 (08) : 5348 - 5354
[29] WERTHEIM GK, 1978, PHOTOEMISSION SOLIDS, V1, pCH5
[30] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE
ZUR, A
MCGILL, TC
SMITH, DL
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2060 - 2067