METAL-SEMICONDUCTOR INTERFACE - SI (111) AND ZINCBLENDE (110) JUNCTIONS

被引：283

作者：

TEJEDOR, C

FLORES, F

LOUIS, E

机构：

[1] UNIV AUTONOMA MADRID,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

[2] CSIC,MADRID 34,SPAIN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 12期

关键词：

D O I：

10.1088/0022-3719/10/12/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2163 / 2177

页数：15

共 26 条

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[2] PSEUDOPOTENTIAL CALCULATION OF SURFACE BAND-STRUCTURE OF SI (111) FACES
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[4] FLORES F, IN PRESS
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[7] THEORY OF SURFACE STATES
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[8] DIELECTRIC THEORY OF BARRIER HEIGHT AT METAL-SEMICONDUCTOR AND METAL-INSULATOR INTERFACES
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[9] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08): : 1350 - 1362
[10] BULK CHARGE NEUTRALITY IN (111) SEMICONDUCTOR SLABS
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[J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3900 - 3903