METAL-SEMICONDUCTOR INTERFACE - SI (111) AND ZINCBLENDE (110) JUNCTIONS

被引：283

作者：

TEJEDOR, C

FLORES, F

LOUIS, E

机构：

[1] UNIV AUTONOMA MADRID,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

[2] CSIC,MADRID 34,SPAIN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 12期

关键词：

D O I：

10.1088/0022-3719/10/12/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2163 / 2177

页数：15

相关论文

共 26 条

[11] BULK CHARGE NEUTRALITY IN SEMICONDUCTORS
KLEINMAN, L
[J]. PHYSICAL REVIEW B, 1975, 11 (02): : 858 - 861
[12] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS
KURTIN, S
MCGILL, TC
MEAD, CA
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (26) : 1433 - +
[13] THEORY OF METAL SURFACES - WORK FUNCTION
LANG, ND
KOHN, W
[J]. PHYSICAL REVIEW B, 1971, 3 (04): : 1215 - &
[14] EQUIVALENCE OF SURFACE-POTENTIALS
LARREA, E
FLORES, F
[J]. SURFACE SCIENCE, 1975, 49 (01) : 339 - 343
[15] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2461 - 2469
[16] METAL-SEMICONDUCTOR JUNCTION FOR (110) SURFACES OF ZINCBLENDE COMPOUNDS
LOUIS, E
YNDURAIN, F
FLORES, F
[J]. PHYSICAL REVIEW B, 1976, 13 (10): : 4408 - 4418
[17] SCHOTTKY-BARRIER HEIGHTS ON P-TYPE DIAMOND AND SILICON-CARBIDE (6H)
MEAD, CA
MCGILL, TC
[J]. PHYSICS LETTERS A, 1976, 58 (04) : 249 - 251
[18] ELECTRONIC-STRUCTURE AND ADHESIVE ENERGIES AT BIMETALLIC INTERFACES
MEHROTRA, R
PANT, MM
DAS, MP
[J]. SOLID STATE COMMUNICATIONS, 1976, 18 (02) : 199 - 201
[19] MICROSCOPIC THEORY OF COVALENT-IONIC TRANSITION AT METAL-SEMICONDUCTOR INTERFACES
PHILLIPS, JC
[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (09) : 861 - 864
[20] SELF-CONSISTENT MANY-ELECTRON THEORY OF ELECTRON WORK FUNCTIONS AND SURFACE POTENTIAL CHARACTERISTICS FOR SELECTED METALS
SMITH, JR
[J]. PHYSICAL REVIEW, 1969, 181 (02): : 522 - &