RHEED PATTERNS AND SURFACE-MORPHOLOGY OF ZNSE HOMOEPITAXIAL FILMS GROWN BY MBE

被引：14

作者：

MENDA, K

MINATO, T

KAWASHIMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.1560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1560 / 1563

页数：4

共 18 条

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[4] SELF-COMPENSATION-LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .3. EXPECTED CORRELATIONS WITH FUNDAMENTAL PARAMETERS
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[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A826 - &
[5] ZNSE HOMO-EPITAXIAL GROWTH BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 342 - 347
[6] RHEED OBSERVATION ON (001)ZNSE SURFACE - MBE SURFACE PHASE-DIAGRAM AND KINETIC-BEHAVIOR OF ZN AND SE ADATOMS
MENDA, K
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MINATO, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1326 - L1329
[7] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L578 - L580
[8] SELF-COMPENSATION-LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .4. N-ZNXCD1-XTE
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MANDEL, G
[J]. PHYSICAL REVIEW, 1965, 137 (3A): : A924 - &
[9] NEUMARK GF, 1980, J APPL PHYS, V51, P3383, DOI 10.1063/1.328051
[10] EFFECT OF ELASTIC STRAIN ON THE ENERGY-BAND GAP IN HETEROEPITAXIALLY GROWN ZNSE
POTTS, JE
CHENG, H
MOHAPATRA, S
SMITH, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 333 - 336

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