EFFECT OF ELASTIC STRAIN ON THE ENERGY-BAND GAP IN HETEROEPITAXIALLY GROWN ZNSE

被引：44

作者：

POTTS, JE

CHENG, H

MOHAPATRA, S

SMITH, TL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：333 / 336

页数：4

共 19 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J].

BROTHERTON, SD ;

READ, TG ;

LAMB, DR ;

WILLOUGHBY, AF .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1367-1375

[3] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J].

DEAN, PJ ;

PITT, AD ;

WRIGHT, PJ ;

YOUNG, ML ;

COCKAYNE, B .

PHYSICA B & C, 1983, 116 (1-3) :508-513

[4] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON [J].

DUNCAN, WM ;

LEE, JW ;

MATYI, RJ ;

LIU, HY .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2161-2164

[5] ON THE GROWTH OF ZNSE ON (100) GAAS BY ATMOSPHERIC-PRESSURE MOVPE [J].

FAN, G ;

WILLIAMS, JO .

MATERIALS LETTERS, 1985, 3 (11) :453-456

[6] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L360-L362

[7] MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J].

GAVINI, A ;

CARDONA, M .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :672-+

[8] HETEROEPITAXIAL GROWTH OF ZNSE BY A CLOSE-SPACED TECHNIQUE - GA INCORPORATION AND MORPHOLOGY [J].

KITAGAWA, M ;

SHINOHARA, A ;

SARAIE, J ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :321-336

[9]

KLEIMAN J, UNPUB

[10] ANOMALOUS VARIATION OF BAND GAP WITH COMPOSITION IN ZINC SULFO-TELLURIDES AND SELENO-TELLURIDES [J].

LARACH, S ;

SHRADER, RE ;

STOCKER, CF .

PHYSICAL REVIEW, 1957, 108 (03) :587-589

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