ON THE GROWTH OF ZNSE ON (100) GAAS BY ATMOSPHERIC-PRESSURE MOVPE

被引：17

作者：

FAN, G ^{[1
]}

WILLIAMS, JO ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,SOLID STATE CHEM GRP,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 11期

关键词：

D O I：

10.1016/0167-577X(85)90139-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：453 / 456

页数：4

共 18 条

[1] THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS
COCKAYNE, B
WRIGHT, PJ
SKOLNICK, MS
PITT, AD
WILLIAMS, JO
NG, TL
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 17 - 22
[2] A STRUCTURAL AND COMPOSITIONAL ANALYSIS OF INTERFACES IN ZNSE0.94S0.06 LAYERS GROWN ON TO GAAS BY OMCVD
COCKAYNE, B
WRIGHT, PJ
BLACKMORE, GW
WILLIAMS, JO
NG, TL
[J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (11) : 3726 - 3731
[3] DAVIES JI, 1985, UNPUB J CHEM SOC F1
[4] DAVIES JI, 1985, UNPUB J CHEM SOC CHE
[5] OPTICAL-PROPERTIES OF UNDOPED ORGANO-METALLIC GROWN ZNSE AND ZNS
DEAN, PJ
PITT, AD
SKOLNICK, MS
WRIGHT, PJ
COCKAYNE, B
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 301 - 306
[6] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE
DEAN, PJ
PITT, AD
WRIGHT, PJ
YOUNG, ML
COCKAYNE, B
[J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513
[7] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE
FUJITA, S
MATSUDA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L360 - L362
[8] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE
FUJITA, S
YODO, T
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30
[9] VAPOR GROWTH AND PROPERTIES OF THIN-FILM ZNSXSE1-X
LEIGH, WB
WESSELS, BW
[J]. THIN SOLID FILMS, 1982, 97 (03) : 221 - 229
[10] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 644 - +

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