DETERMINATION OF MINORITY-CARRIER LIFETIME USING MIS TUNNEL-DIODES

被引:18
作者
KAR, S [1 ]
机构
[1] INST ANGEW FESTKOERPER PHYS, ECKER STR 4, 78 FREIBURG, GERMANY
关键词
D O I
10.1063/1.1655322
中图分类号
O59 [应用物理学];
学科分类号
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页码:587 / 589
页数:3
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[3]   INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].
KAR, S ;
DAHLKE, WE .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+
[4]  
KAR S, 1971, THESIS LEHIGH U
[5]  
KAR S, UNPUBLISHED
[7]   POTENTIAL BARRIER ATTENUATION DUE TO ELECTRIC FIELD PENETRATION OF ELECTRODES [J].
SIMMONS, JG .
PHYSICS LETTERS, 1965, 16 (03) :233-&