EVALUATION OF SURFACE STATE AT OXIDIZED SILICON FROM CHARACTERISTICS OF SURFACE VARACTOR DIODE

被引：4

作者：

HORIUCHI, S

YAMAGUCHI, J

SHIBATA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 06期

关键词：

D O I：

10.1143/JJAP.4.394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：394 / +

页数：1

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