HETERO-NIPI BAND FILLING MODULATOR WITH LATERALLY INTERDIGITAL CONTACTS MADE BY SHADOW MASK MOLECULAR-BEAM EPITAXY REGROWTH

被引：14

作者：

WU, X ^{[1
]}

GULDEN, KH ^{[1
]}

THOMAS, M ^{[1
]}

SMITH, JS ^{[1
]}

WHINNERY, JR ^{[1
]}

MALZER, S ^{[1
]}

KIESEL, P ^{[1
]}

KNEISSL, M ^{[1
]}

DOHLER, GH ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST TECH PHYS,W-8520 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaAs/GaAs optical hetero-nipi modulator based on band filling effect with interdigital selective contacts has been fabricated by use of shadow mask molecular beam epitaxy (MBE) regrowth technique. There is a five order of magnitude change in I-V characteristics from forward to reverse junction bias, which indicates the high quality of the interdigital contacts. The measured reflectance spectra show a change of the absorption coefficient of about 7850 cm-1 with an applied bias voltage as low as 1.5 V.

引用

页码：152 / 153

页数：2

共 4 条

[1]

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[3] ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GAAS [J].

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[4]

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