DOPING SUPERLATTICES GROWN IN CHANNELED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY THROUGH A BUILT-IN SHADOW MASK

被引：10

作者：

HASNAIN, G ^{[1
]}

MARS, D ^{[1
]}

DOHLER, GH ^{[1
]}

OGURA, M ^{[1
]}

SMITH, JS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：831 / 833

页数：3

相关论文

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[2] DOHLER GH, 1986, APPL PHYS LETT, V49, P704, DOI 10.1063/1.97573
[3] SELF-ALIGNED GAAS-GAALAS SEMICONDUCTOR-LASER WITH LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
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[4] HIGHLY TUNABLE AND EFFICIENT ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM GAAS DOPING SUPERLATTICES
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