ATOMISTIC PROCESSES OF SURFACE SEGREGATION DURING SI-GE MBE GROWTH

被引：13

作者：

JESSON, DE ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

BARIBEAU, JM ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90046-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic-scale segregation at step edges during growth is proposed as the origin of ordering in the Si-Ge system. Cross-sectional Z-contrast imaging of as-grown structures reveals that a variety of ordered phase variants can exist at Si on Ge interfaces as a result of vertical segregation during superlattice growth. Long-range ordering in alloys is predicted to arise due to segregation at monolayer or bilayer steps depending on the evolving surface morphology.

引用

页码：98 / 103

页数：6

共 17 条

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