ANNEALING BEHAVIOR OF THE 0,8EV LUMINESCENCE IN UNDOPED SEMI-INSULATING GAAS

被引：25

作者：

WINDSCHEIF, J

ENNEN, H

KAUFMANN, U

SCHNEIDER, J

KIMURA, T

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1007/BF00617713

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 49

页数：3

共 9 条

[1] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].

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CHEN, RT ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901

[2] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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CHEN, RT ;

ELLIOTT, KR ;

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APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[3] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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GATOS, HC ;

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WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[4] COMPENSATION MECHANISMS IN GAAS [J].

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HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[5] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

MIRCEAROUSSEL, A ;

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1007-1009

[6] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

TAJIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L227-L229

[7] IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS [J].

WEBER, ER ;

ENNEN, H ;

KAUFMANN, U ;

WINDSCHEIF, J ;

SCHNEIDER, J ;

WOSINSKI, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6140-6143

[8]

WORNER R, 1982, APPL PHYS LETT, V40, P141, DOI 10.1063/1.93016

[9]

YU PW, 1982, I PHYS C SER, V63, P209

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