SOME PROPERTIES OF OHMIC METAL-SEMICONDUCTOR CONTACTS

[1] BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, V2

[2] BRIDGERS HE, 1958, TRANSISTOR TECHNOLOG, V1

[3] SOME PROPERTIES OF DIRTY CONTACTS ON SEMICONDUCTORS AND RESISTIVITY MEASUREMENTS BY A 2 TERMINAL METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2198 - &

[4] THE ELECTRIC TUNNEL EFFECT ACROSS THIN INSULATOR FILMS IN CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (05) : 569 - 574

[5] HOLM R, 1958, ELECTRIC CONTACTS HA, P435

[6] NIBLER F, 1958, THESIS TH MUNCHEN

[7] SOMMERFELD A, 1933, HANDB PHYSIK, V24, P450

[1] BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, V2

[2] BRIDGERS HE, 1958, TRANSISTOR TECHNOLOG, V1

[3] SOME PROPERTIES OF DIRTY CONTACTS ON SEMICONDUCTORS AND RESISTIVITY MEASUREMENTS BY A 2 TERMINAL METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2198 - &

[4] THE ELECTRIC TUNNEL EFFECT ACROSS THIN INSULATOR FILMS IN CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (05) : 569 - 574

[5] HOLM R, 1958, ELECTRIC CONTACTS HA, P435

[6] NIBLER F, 1958, THESIS TH MUNCHEN

[7] SOMMERFELD A, 1933, HANDB PHYSIK, V24, P450