SOME PROPERTIES OF DIRTY CONTACTS ON SEMICONDUCTORS AND RESISTIVITY MEASUREMENTS BY A 2 TERMINAL METHOD

被引：11

作者：

HARMAN, GG

HIGIER, T

机构：

来源：

关键词：

D O I：

10.1063/1.1728927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2198 / &

共 30 条

[1]

[Anonymous], 1957, RECTIFYING SEMICONDU

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3]

BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, pCH3

[4] RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS [J].

BORNEMAN, EH ;

SCHWARZ, RF ;

STICKLER, JJ .

[5]

CHANG HC, AD214955 ASTIA

[6]

CHANG HC, 1958, AF336165592 CONTR

[7] SOME SURFACE PROPERTIES OF SILICON-CARBIDE CRYSTALS [J].

DILLON, JA ;

SCHLIER, RE ;

FARNSWORTH, HE .

DILWORTH, CC .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (340) :315-325

[9] NEW LOW CONTACT RESISTANCE ELECTRODE [J].

FLASCHEN, SS ;

VANUITERT, LG .

[10]

HAMPEL CA, 1961, RARE METALS HDB, pCH10