THE EFFECT OF ANNEALING AND HYDROGENATION ON THE DISLOCATION CONDUCTION IN SILICON

被引：18

作者：

KVEDER, VV

OSIPYAN, YA

SAGDEEV, IR

SHALYNIN, AI

ZOLOTUKHIN, MN

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 02期

关键词：

D O I：

10.1002/pssa.2210870230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：657 / 665

页数：9

共 16 条

[1] THE EFFECT OF ANNEALING ON THE DISLOCATION DISSOCIATION IN PLASTICALLY DEFORMED SILICON [J].

ARISTOV, VV ;

ZOLOTUKHIN, MN ;

KVEDER, VV ;

OSIPYAN, YA ;

SNIGHIREVA, II ;

KHODOS, II .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02) :485-491

[2]

Grazhulis V. A., 1976, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, Pis'ma v Redaktsiyu, V24, P164

[3] INVESTIGATION OF ENERGY-SPECTRUM AND KINETIC PHENOMENA IN DISLOCATED SI CRYSTALS .1. [J].

GRAZHULIS, VA ;

KVEDER, VV ;

MUKHINA, VY .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (02) :407-415

[4] INVESTIGATION OF THE DISLOCATION SPIN SYSTEM IN SILICON AS MODEL OF ONE-DIMENSIONAL SPIN CHAINS [J].

GRAZHULIS, VA ;

KVEDER, VV ;

OSIPYAN, YA .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (02) :519-528

[5]

KVEDER V, UNPUB

[6] ON THE ENERGY-SPECTRUM OF DISLOCATIONS IN SILICON [J].

KVEDER, VV ;

OSIPYAN, YA ;

SCHROTER, W ;

ZOTH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :701-713

[7] ONE-DIMENSIONAL TRANSPORT ALONG DISLOCATIONS [J].

LABUSCH, R .

PHYSICA B & C, 1983, 117 (MAR) :203-208

[8]

Osip'yan Yu. A., 1979, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V30, P123

[9]

OSSIPYAN YA, 1981, CRYSTAL RES TECHNOL, V16, P247

[10] REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III) [J].

PANDEY, KC .

PHYSICAL REVIEW B, 1976, 14 (04) :1557-1570

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