REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III)

[1] SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 806 - 809

[2] SURFACE STATES AND SURFACE BONDS OF SI(111) [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 106 - 109

[3] SURFACE STUDIES BY SPECTRAL ANALYSIS OF INTERNALLY REFLECTED INFRARED RADIATION - HYDROGEN ON SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (12) : 2942 - &

[4] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[5] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[6] CALCULATION OF COHESION AND SURFACE TENSION OF TRANSITION METALS BY A TIGHT BINDING METHOD [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (07) : 1235 - +

[7] DAVISSON SG, 1970, SOLID STATE PHYSICS, V25

[8] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[9] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &

[10] INDIRECT INTERACTION BETWEEN ADATOMS ON A TIGHT-BINDING SOLID [J]. PHYSICAL REVIEW B, 1973, 7 (08) : 3629 - 3648

[1] SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 806 - 809

[2] SURFACE STATES AND SURFACE BONDS OF SI(111) [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 106 - 109

[3] SURFACE STUDIES BY SPECTRAL ANALYSIS OF INTERNALLY REFLECTED INFRARED RADIATION - HYDROGEN ON SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (12) : 2942 - &

[4] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[5] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[6] CALCULATION OF COHESION AND SURFACE TENSION OF TRANSITION METALS BY A TIGHT BINDING METHOD [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (07) : 1235 - +

[7] DAVISSON SG, 1970, SOLID STATE PHYSICS, V25

[8] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[9] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &

[10] INDIRECT INTERACTION BETWEEN ADATOMS ON A TIGHT-BINDING SOLID [J]. PHYSICAL REVIEW B, 1973, 7 (08) : 3629 - 3648