MEASUREMENT OF THE INTERFACIAL ENERGY BETWEEN AMORPHOUS SI AND CRYSTALLINE SI

被引：12

作者：

TU, KN

机构：

[1] I.B.M. Research Division, T.J. Watson Research Centre, Yorktown Heights, 10598, NY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 01期

关键词：

D O I：

10.1007/BF00323431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110.

引用

页码：32 / 34

页数：3

共 9 条

[1] Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].