INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE

被引：4

作者：

RICCIUS, HD

BERTIE, JE

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1966年 / 44卷 / 07期

关键词：

D O I：

10.1139/p66-140

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1665 / &

共 9 条

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[5]

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[6]

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[7] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J].

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[8] PROPERTIES OF HEAVILY DOPED N-TYPE GERMANIUM [J].

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[9] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].

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