POSITRON-ANNIHILATION IN SI AND GAAS CRYSTALS WITH AN APPLIED MAGNETIC-FIELD

被引：9

作者：

AREFIEV, KP ^{[1
]}

KARETNIKOV, AS ^{[1
]}

TSOI, AA ^{[1
]}

VOROBIEV, SA ^{[1
]}

机构：

[1] TOMSK NUCL PHYS RES INST,TOMSK,USSR

来源：

关键词：

D O I：

10.1016/0375-9601(76)90572-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：219 / 220

页数：2

共 9 条

[1] AREFEV KP, 1976, FIZ TVERD TELA+, V18, P669
[2] POSITRON-ANNIHILATION IN SILICON-CRYSTALS WITH MECHANICALLY PROCESSED SURFACES
AREFIEV, KP
KARETNIKOV, AS
VOROBIEV, SA
[J]. APPLIED PHYSICS, 1975, 8 (03): : 273 - 276
[3] AREFIEV KP, TO BE PUBLISHED
[4] AREFIEV KP, 1975, P SCI PRACTICAL C, P137
[5] POSITRON ESCAPE FROM ANNIHILATION CENTERS IN ELECTRON-IRRADIATED SI CRYSTALS
BRANDT, W
CHENG, LJ
[J]. PHYSICS LETTERS A, 1975, A 50 (06) : 439 - 440
[6] DANNEFAER S, 1973, THESIS LYNGBY
[7] EFFECT OF IMPURITIES OF ANGULAR CORRELATION OF POSITRON ANNIHILATION RADIATION
DEZAFRA, RL
[J]. PHYSICAL REVIEW, 1959, 113 (06): : 1547 - 1555
[8] THEORY OF INTERSTITIAL IMPURITY STATES IN SEMICONDUCTORS
KAUS, PE
[J]. PHYSICAL REVIEW, 1958, 109 (06): : 1944 - 1952
[9] MUONIUM IN SILICON AND GERMANIUM - DEEP DONOR
WANG, JSY
KITTEL, C
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 713 - 718