ARSENIC DOPANT INFLUENCE UPON THE SINTERING BEHAVIOR OF THE ALUMINUM-POLYSILICON INTERFACE

[1] CARTER G, 1976, ION IMPLANTATION SEM, P164

[2] HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4630 - 4639

[3] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[4] HANSEN M, 1958, CONSTITUTION BINARY, P133

[5] SOLID-PHASE CRYSTALLIZATION OF SI FILMS IN CONTACT WITH AI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2897 - 2904

[6] HIRAKI A, 1982, JAPAN ANN REV ELECTR, P36

[7] GRAIN-BOUNDARY DIFFUSION OF ALUMINUM IN POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1576 - 1581

[8] KAMINS TI, 1978, J ELECTROCHEM SOC, V125, P929

[9] LAU SS, 1980, HDB SEMICONDUCTORS, V3, P532

[10] METHODS FOR MINIMIZING SILICON REGROWTH IN ALUMINUM FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 611 - 614

[1] CARTER G, 1976, ION IMPLANTATION SEM, P164

[2] HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4630 - 4639

[3] Gupta D., 1978, Thin films. Interdiffusion and reactions, P161

[4] HANSEN M, 1958, CONSTITUTION BINARY, P133

[5] SOLID-PHASE CRYSTALLIZATION OF SI FILMS IN CONTACT WITH AI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2897 - 2904

[6] HIRAKI A, 1982, JAPAN ANN REV ELECTR, P36

[7] GRAIN-BOUNDARY DIFFUSION OF ALUMINUM IN POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1576 - 1581

[8] KAMINS TI, 1978, J ELECTROCHEM SOC, V125, P929

[9] LAU SS, 1980, HDB SEMICONDUCTORS, V3, P532

[10] METHODS FOR MINIMIZING SILICON REGROWTH IN ALUMINUM FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 611 - 614